advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -60v through hole type r ds(on) 500m rohs compliant & halogen-free i d -1.5a description absolute maximum ratings symbol units v ds v v gs v i d @t l =25 a i d @t l =100 a i dm a p d @t l =25 w p d @t a =25 w t stg t j symbol value units rthj-l maximum thermal resistance, junction-lead 60 /w rthj-a maximum thermal resistance, junction-ambient 150 /w data and specifications subject to change without notice -55 to 150 200908211 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v continuous drain current, v gs @ 10v 1 operating junction temperature range -60 -1.2 pulsed drain current 1 thermal data parameter storage temperature range -55 to 150 2.08 halogen-free product ap9770gt-hf rating total power dissipation 0.83 + 20 -1.5 total power dissipation -6 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the to-92 package is widely used for all commercial-industrial applications. to-92 (s-type) g d s
ap9770gt-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-0.8a - - 500 m ? v gs =-4.5v, i d =-0.6a - - 800 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-0.8a - 3.3 - s i dss drain-source leakage current v ds =-60v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-1a - 6.8 11 nc q gs gate-source charge v ds =-48v - 1.6 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3.2 - nc t d(on) turn-on delay time 2 v ds =-30v - 8.4 - ns t r rise time i d =-1a - 5.4 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 23 - ns t f fall time r d =30 -5- ns c iss input capacitance v gs =0v - 560 900 pf c oss output capacitance v ds =-25v - 60 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf r g gate resistance f=1.0mhz - 6.5 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-0.6a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-1a, v gs =0v, - 30 - ns q rr reverse recovery charge di/dt=-100a/s - 42 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2
ap9770gt-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 160 180 200 220 240 260 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -0.6 a t c =25 o c 0 1 2 3 4 5 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v - 7 .0v - 6 .0v - 5.0 v v g =-4.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = - 0.8 a v g = -10v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 1 2 3 4 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v
ap9770gt-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0481216 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -48v i d = -1a 0 200 400 600 800 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thjl ) p dm duty factor = t/t peak t j = p dm x r thjl + t l t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 0 1 10 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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